SCOPUS 정보 검색 플랫폼

Volumn 150, Issue 9, 2003, Pages

In-Line Electrical Metrology for High-K Gate Dielectrics Deposited by Atomic Layer CVD

e IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE EFFECTS;

ELECTRICAL METROLOGY;

DIELECTRIC MATERIALS;

EID: 0041779978 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1595663 Document Type: Article

Times cited : (11)

References (8)

1
- 0034454056
- D. A. Buohanan, E. P. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. A. Mocuta, A. Ajmera, M. Copel, S. Guha, N. Bojarczuk, A. Callegari, C. D. Emic, P. Kozlowski, K. Chan, R. J. Fleming, P. C. Jamison, J. Brown, and R. Arndt, Tech. Dig. Int. Electron Devices Meet, 2000, 223.
- (2000) Tech. Dig. Int. Electron Devices Meet , pp. 223
- Buohanan, D.A.¹ Gusev, E.P.² Cartier, E.³ Okorn-Schmidt, H.⁴ Rim, K.⁵ Mocuta, M.A.⁶ Ajmera, A.⁷ Copel, M.⁸ Guha, S.⁹ Bojarczuk, N.¹⁰ Callegari, A.¹¹ Emic, C.D.¹² Kozlowski, P.¹³ Chan, K.¹⁴ Fleming, R.J.¹⁵ Jamison, P.C.¹⁶ Brown, J.¹⁷ Arndt, R.¹⁸

2
- 4243948509
- K. Torii, Y. Shimamoto, S. Saito, K. Obata, T. Yamauchi, D. Hisamoto, N. Yokoyama, M. Hiratani, and T. Onai, International Workshop on Gate Insulators 2001, p. 8-06 (2001).
- (2001) International Workshop on Gate Insulators 2001 , pp. 8-06
- Torii, K.¹ Shimamoto, Y.² Saito, S.³ Obata, K.⁴ Yamauchi, T.⁵ Hisamoto, D.⁶ Yokoyama, N.⁷ Hiratani, M.⁸ Onai, T.⁹

3
- 26544478412
- Y. H. Kim, C. H. Lee, T. S. Jeon, W. P. Bai, C. H. Choi, S. J. Lee, L. Xinjian, R. Clarks, D. Roberts, and D. L. Kwong, Tech. Dig. Int. Electron Devices Meet., 2001, 30.5.1.
- (2001) Tech. Dig. Int. Electron Devices Meet. , pp. 3051
- Kim, Y.H.¹ Lee, C.H.² Jeon, T.S.³ Bai, W.P.⁴ Choi, C.H.⁵ Lee, S.J.⁶ Xinjian, L.⁷ Clarks, R.⁸ Roberts, D.⁹ Kwong, D.L.¹⁰

4
- 4243606948
- J. M. Hergenrother, G. D. Wilk, T. Nigam, F. P. Klemens, D. Monroe, P. J. Silverman, T. W. Sorsch, B. Busch, M. L. Green, M. R. Baker, T. Boone, M. K. Bude, N. A. Ciampa, E. J. Ferry, A. T. Fiory, S. J. Hillenius, D. C. Jacobson, Tech. Dig. Int. Electron Devices Meet., 2001, 3.1.1.
- (2001) Tech. Dig. Int. Electron Devices Meet. , pp. 311
- Hergenrother, J.M.¹ Wilk, G.D.² Nigam, T.³ Klemens, F.P.⁴ Monroe, D.⁵ Silverman, P.J.⁶ Sorsch, T.W.⁷ Busch, B.⁸ Green, M.L.⁹ Baker, M.R.¹⁰ Boone, T.¹¹ Bude, M.K.¹² Ciampa, N.A.¹³ Ferry, E.J.¹⁴ Fiory, A.T.¹⁵ Hillenius, S.J.¹⁶ Jacobson, D.C.¹⁷

5
- 0041555694
- T. G. Miller, Semicond. Int., 1995, 147.
- (1995) Semicond. Int. , pp. 147
- Miller, T.G.¹

6
- 0042056880
- Abstract 1106, Oct 17-22
- J. Guan, G. Gale, G. Bersuker, Y. Jeon, and M. Jackson, Abstract 1106, The Electrochemical Society and The Electrochemical Society of Japan Meeting Abstracts, Vol. 99-2, Oct 17-22, 1999.
- (1999) The Electrochemical Society and The Electrochemical Society of Japan Meeting Abstracts , vol.99 , Issue.2
- Guan, J.¹ Gale, G.² Bersuker, G.³ Jeon, Y.⁴ Jackson, M.⁵

7
- 0001954222
- J. R. Hauser and K. Ahmed, AIP Conf. Proc., 449(1), 235 (1998).
- (1998) AIP Conf. Proc. , vol.449 , Issue.1 , pp. 235
- Hauser, J.R.¹ Ahmed, K.²

8
- 0032645390
- M. M. Heyns, T. Bearda, I. Comelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. W. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, IBM J. Res. Dev., 43(3), 339 (1999).
- (1999) IBM J. Res. Dev. , vol.43 , Issue.3 , pp. 339
- Heyns, M.M.¹ Bearda, T.² Comelissen, I.³ De Gendt, S.⁴ Degraeve, R.⁵ Groeseneken, G.⁶ Kenens, C.⁷ Knotter, D.M.⁸ Loewenstein, L.M.⁹ Mertens, P.W.¹⁰ Mertens, S.¹¹ Meuris, M.¹² Nigam, T.¹³ Schaekers, M.¹⁴ Teerlinck, I.¹⁵ Vandervorst, W.¹⁶ Vos, R.¹⁷ Wolke, K.¹⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.