A physical understanding of the noise performance of MOS transistors for wireless and lightwave applications in the giga-bit regime

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5844, Issue , 2005, Pages 10-22

  Jindal, R P ^a  

^a University of Louisiana at Lafayette   (United States)

Author keywords

CMOS noise; Excess channel noise; Gate resistance noise; Hot carrier noise; Induced gate noise; MOSFET noise; Optical circuits and systems; Substrate resistance noise; Thermal noise; Wireless circuits and systems

Indexed keywords

CMOS INTEGRATED CIRCUITS; HOT CARRIERS; MOS DEVICES; MOSFET DEVICES; NANOTECHNOLOGY; WIRELESS TELECOMMUNICATION SYSTEMS;

CMOS NOISE; EXCESS CHANNEL NOISE; GATE RESISTANT NOISE; INDUCED GATE NOISE; MOSFET NOISE; NANOMETERS; OPTICAL CIRCUITS AND SYSTEM; SUBSTRATE RESISTANCE NOISE; WIRELESS CIRCUITS AND NOISE;

THERMAL NOISE;

EID: 28444447068     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.609965     Document Type: Conference Paper

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