Noise associated with interdigitated gate structures in RF submicron MOSFETs

IEEE Transactions on Electron Devices

Volumn 47, Issue 9, 2000, Pages 1745-1750

  Tsakas, Evangelos F ^a,b   Birbas, Alexios N ^a,b  

^a IEEE   (Greece)

^b UNIVERSITY OF PATRAS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CLASSICAL CHANNEL THERMAL NOISE; DISTRIBUTED GATE ELECTRODE; INTERCONNECT RESISTOR; INTERDIGITATED STRUCTURE; LOW NOISE AMPLIFIER; SHORT CHANNEL EFFECT; TWO PORT ANALYSIS;

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE; ELECTRODES; MICROWAVE INTEGRATED CIRCUITS; RESISTORS; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; THERMAL NOISE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0034273928     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.861586     Document Type: Article

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