Physical noise modeling of SOI MOSFET's with analysis of the Lorentzian component in the low-frequency noise spectrum

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1192-1201

  Workman, Glenn O ^a   Possum, Jerry G ^b  

^a University of Florida   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; FREQUENCIES; IMPACT IONIZATION; SEMICONDUCTOR DEVICE MODELS; SHOT NOISE; SILICON ON INSULATOR TECHNOLOGY; SPECTRUM ANALYSIS; THERMAL NOISE;

BODY-TIED-TO-SOURCE MOSFET; FLOATING BODY MOSFET; LORENTZIAN COMPONENT; NOISE MODELING; SOFTWARE PACKAGE MEDICI;

MOSFET DEVICES;

EID: 0033750499     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842961     Document Type: Article

References (30)

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