Experimental study and modeling of the white noise sources in submicron P - and N - MOSFETs

IEEE Transactions on Nuclear Science

Volumn 48, Issue 4 III, 2001, Pages 1577-1586

  Re, V ^a,b   Bietti, I ^c   Castello, R ^d   Manghisoni, M ^b,c   Speziali, V ^b,d   Svelto, F ^b,d  

^a UNIVERSITY OF BERGAMO   (Italy)

^b INFN SEZIONE DI PAVIA   (Italy)

^c STMICROELECTRONICS   (Italy)

^d UNIVERSITY OF PAVIA   (Italy)

Author keywords

Noise; Short channel MOSFET; Submicron

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOT CARRIERS; RESISTORS; TRANSCONDUCTANCE; VELOCITY; WHITE NOISE;

SUBMICRON; VELOCITY SATURATION;

MOSFET DEVICES;

EID: 0035428655     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.958399     Document Type: Conference Paper

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