Simulation of temperature dependence of microwave noise in metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 A, 2000, Pages 1690-1693

  Obrecht, Michael S ^a,b   Manku, Tajinder ^a   Elmasry, Mohamed I ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b Siborg Systems Inc   (Canada)

Author keywords

Diffusion drift; Microwave; MOSFET; Noise; Simulation

Indexed keywords

EID: 0005331330     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1690     Document Type: Article

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