A new model for thermal channel noise of deep-submicron MOSFETS and its application in RF-CMOS design

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 5, 2001, Pages 831-837

  Knoblinger, Gerhard ^a,b   Klein, Peter ^b   Tiebout, Marc ^a,b  

^a IEEE   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Integrated circuit modeling; Integrated circuit noise; MOSFET amplifiers; MOSFETs; Semiconductor device modeling; Semiconductor device noise

Indexed keywords

DEEP SUBMICRON MOS TRANSISTOR; HOT CARRIER EFFECT; LOW NOISE AMPLIFIER; SOFTWARE PACKAGE BSIM3V3 SPICE MODEL; THERMAL CHANNEL NOISE;

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELDS; HOT CARRIERS; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; THERMAL NOISE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0035335392     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.918922     Document Type: Article

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