Compact modelling of noise for RF CMOS circuit design

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 2, 2004, Pages 167-174

  Scholten, A J ^a   Tiemeijer, L F ^a   Van Langevelde, R ^a   Havens, R J ^a   Zegers Van Duijnhoven, A T A ^a   De Kort, R ^a   Klaassen, D B M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; POLYSILICON; SPURIOUS SIGNAL NOISE; THERMAL NOISE;

GATE CURRENT NOISE; PARASITIC RESISTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 2942631080     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040373     Document Type: Article

References (32)

1. Morifuji, E., Momose, H.S., Oghuro, T., Yoshitomi, T., Kimijama, H., Matsuoka, F., Kinugawa, M., Katsumata, Y., and Iwai, H.: 'Future perspective and scaling down roadmap for RF CMOS'. Dig. Tech. Papers VLSI Symp., Kyoto, Japan, 1999, pp. 163-164
2. Holloway, T.C. et al.: '0.18 μm CMOS technology for high-performance, low-power, and RF applications'. Dig. Tech. Papers VLSI Symp., Kyoto, Japan, 1997, pp. 13-14
3. Venezia, V.C., Scholten, A.J., Detcheverry, C., Boots, H., Jeamsaksiri, W., Grau, L., Klaassen, D.B.M., Velghe, R.M.D.A., Havens, R.J., and Tiemeijer, L.F.: 'The RF potential of high performance 100 nm CMOS technology'. Proc. 32nd European Solid-State Device Research Conf. (ESSDERC), Firenze, Italy, 2002, pp. 491-494
4. Abidi, A.A.: 'High-frequency noise measurements on FET's with small dimensions', IEEE Trans. Electron Devices, 1986, ED-33, pp. 1801-1805
5. Klein, P.: 'An analytical thermal noise model of deep submicron MOSFET's for circuit simulation with emphasis on the BSIM3v3 SPICE model'. Proc. 28th European Solid-State Device Research Conf. (ESSDERC), 1998, pp. 460-463
6. Klein, P.: 'An analytical thermal noise model of deep submicron MOSFET's', IEEE Electron Device Lett., 1999, 20, pp. 399-401
7. Knoblinger, G.: 'RF noise of deep-submicron MOSFETs: extraction and modeling'. Proc. 31st European Solid-State Device Research Conf. (ESSDERC), 2001, pp. 331-334
8. Knoblinger, G., Klein, P., and Tiebout, M.: 'A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design', IEEE J. Solid-State Circuits, 2001, 36, (5), pp. 831-837
9. Scholten, A.J., Tromp, H.J., Tiemeijer, L.F., van Langevelde, R., Havens, R.J., de Vreede, P.W.H., Roes, R.F.M., Woerlee, P.H., Montree, A.H., and Klaassen, D.B.M.: 'Accurate thermal noise model for deep-submicron CMOS'. Int. Electron Devices Meeting Tech. Dig., 1999, pp. 155-158
10. Scholten, A.J., Tiemeijer, L.F., van Langevelde, R., Havens, R.J., Venezia, V.C., Zegers-van Duijnhoven, A.T.A., Neinhüs, B., Jungemann, C., and Klaassen, D.B.M.: 'Compact modeling of drain and gate current noise for RF CMOS'. Int. Electron Devices Meeting Tech. Dig., 2002, pp. 129-132
11. Scholten, A.J., Tiemeijer, L.F., van Langevelde, R., Havens, R.J., Zegers-van Duijnhoven, A.T.A., and Venezia, V.C.: 'Noise modeling for RF CMOS circuit simulation', IEEE Trans. Electron Devices, (to be published)
12. Scholten, A.J., Tiemeijer, L.F., van Langevelde, R., Havens, R.J., Zegers-van Duijnhoven, A.T.A., de Kort, R., Venezia, V.C., and Klaassen, D.B.M.: 'Compact modeling of noise for RF CMOS circuit design'. Presented at 1st Int. Symp. on Fluctuations and Noise, Santa Fe, NM, USA, 2003.
13. Klaassen, F.M., and Prins, J.: 'Thermal noise of MOS transistors', Philips Res. Rep., 1967, 22, pp. 504-514
14. Jamal Deen, M., Chen, C.H., and Cheng, Y.: 'MOSFET modeling for low noise, RF circuit design'. Proc IEEE Custom Integrated Circuits Conf. (CICC), 2002, pp. 201-208
15. http://www.semiconductors.philips.com/Philips_models
16. van Langevelde, R., Scholten, A.J., Havens, R.J., Tiemeijer, L.F., and Klaassen, D.B.M.: 'Advanced compact MOS modelling'. Proc. 31st European Solid-State Device Research Conf. (ESSDERC), 2001, pp. 81-88
17. Tsividis, Y.P.: 'Operation and modeling of the MOS transistor' (McGraw-Hill, 1987)
18. Chan, M., Hui, K.Y., Hu, C., and Ko, P.K.: 'A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation', IEEE Trans. Electron Devices, 1998, 45, pp. 834-841
19. Scholten, A.J., Tiemeijer, L.F., de Vreede, P.W.H., and Klaassen, D.B.M.: 'A large signal non-quasi-static MOS model for RF circuit simulation'. Int. Electron Devices Meeting Tech. Dig., 1999, pp. 163-166
20. Scholten, A.J., van Langevelde, R., Tiemiejer, L.F., Havens, R.J., and Klaassen, D.B.M.: 'Compact MOS modelling for RF CMOS circuit simulation'. Proc. Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece, 2001, pp. 194-201
21. Razavi, B., Yan, R.H., and Lee, K.F.: 'Impact of distributed gate resistance on the performance of MOS devices', IEEE Trans. Circuits Syst. I, Fundam. Theory Appl., 1994, 41, pp. 750-754
22. Jindal, R.P.: 'Noise associated with distributed resistance of MOSFET gate structures in integrated circuits', IEEE Trans. Electron Devices, 1984, ED-31, pp. 1505-1509
23. Litwin, A.: 'Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors', IEEE Trans. Electron Devices, 2001, 48, pp. 2179-2181
24. Pucel, R.A., Struble, W., Hallgren, R., and Rohde, U.L.: 'A general noise de-embedding procedure for packaged two-port linear active devices', IEEE Trans. Microw. Theory Tech., 1992, 40, pp. 2013-2024
25. Hillbrand, H., and Russer, P.H.: 'An efficient method for computer aided noise analysis of linear amplifier networks', IEEE Trans. Circuits Syst., 1976, 23, (4), pp. 235-238
26. Koolen, M.A.C.M., Geelen, J.A.M., and Versleijen, M.P.J.G.: 'An improved de-embedding technique for on-wafer high frequency characterization'. Proc. Bipolar Circuits and Technology Meeting, Minneapolis, MN, USA, 1991, pp. 188-191
27. Tiemeijer, L.F., and Klaassen, D.B.M.: 'Geometry scaling of the substrate loss of RF MOSFETs'. Proc. 28th European Solid-State Device Research Conf. (ESSDERC), 1998, pp. 480-483
28. Pascht, A., Grözing, M., Wiegner, D., and Berroth, M.: 'Small-signal and temperature noise model for MOSFETs', IEEE Trans. Microw. Theory Tech., 2002, 50, (8), pp. 1927-1934
29. Cheng, Y., Chen, C.H., Matloubian, M., and Jamal Deen, M.: 'High-frequency small signal AC and noise modeling of MOSFETs for RF IC design', IEEE Trans. Electron Devices, 2002, 49, (3), pp. 400-408
30. Brederlow, R., Wenig, G., and Thewes, R.: 'Investigation of the thermal noise of MOS transistors under analog and RF operating conditions'. Proc. 32nd European Solid-State Device Research Conference (ESSDERC), 2002
31. van der Ziel, A., and Chenette, E.R.: 'Noise in solid state devices', Adv. Electron. Electron Phys., 1978, 46, p. 313
32. Rigaud, D., and Valenza, M.: 'Correlation measurement of carrier multiplication noise sources in MOS transistors at low frequencies', IEEE Trans. Electron Devices, 1994, 41, (11), pp. 2076-2081