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Volumn 16, Issue 5, 1997, Pages 437-447

A small-signal MOSFET model for radio frequency 1C applications

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; THERMAL NOISE;

EID: 0031144820     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.631207     Document Type: Article
Times cited : (60)

References (8)
  • 1
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    • "Low-power radio-frequency IC's for portable communications," vol. 83, pp. 544-569, Apr. 1995.
    • A. A. Abidi, "Low-power radio-frequency IC's for portable communications," Proc. IEEE, vol. 83, pp. 544-569, Apr. 1995.
    • Proc. IEEE
    • Abidi, A.A.1
  • 2
    • 0028386555 scopus 로고    scopus 로고
    • "MOSFET modeling for analog circuit CAD: Problems and prospects," vol. 29, pp. 210-216, 1994.
    • Y. P. Tsividis, "MOSFET modeling for analog circuit CAD: Problems and prospects," IEEEJ. Solid-State Circuits, vol. 29, pp. 210-216, 1994.
    • IEEEJ. Solid-State Circuits
    • Tsividis, Y.P.1
  • 3
    • 0021501926 scopus 로고    scopus 로고
    • "Noise associated with distributed resistance of MOSFET gate structure in integrated circuits," vol. ED-31, pp. 1505-1509, Oct. 1984.
    • R. P. Jindal, "Noise associated with distributed resistance of MOSFET gate structure in integrated circuits," IEEE Trans. Electron Devices, vol. ED-31, pp. 1505-1509, Oct. 1984.
    • IEEE Trans. Electron Devices
    • Jindal, R.P.1
  • 4
    • 0026928767 scopus 로고    scopus 로고
    • "A nonquasi-static MOSFET model for SPICE-AC analysis," vol. 11, pp. 1247-1257, Oct. 1992.
    • H. J. Park, P. K. Ko, and C. Hu, "A nonquasi-static MOSFET model for SPICE-AC analysis," IEEE Trans. Computer-Aided Design, vol. 11, pp. 1247-1257, Oct. 1992.
    • IEEE Trans. Computer-Aided Design
    • Park, H.J.1    Ko, P.K.2    Hu, C.3
  • 5
    • 0022152815 scopus 로고    scopus 로고
    • "A small signal dc-to-high-frequency nonquasistatic model for four-terminal MOSFET valid in all regions of operation," 32, pp. 2383-2391, Nov. 1985.
    • M. Bagheri and Y. Tsividis, "A small signal dc-to-high-frequency nonquasistatic model for four-terminal MOSFET valid in all regions of operation," IEEE Trans. Electron Devices, vol. ED32, pp. 2383-2391, Nov. 1985.
    • IEEE Trans. Electron Devices, Vol. ED
    • Bagheri, M.1    Tsividis, Y.2
  • 6
    • 0014628480 scopus 로고    scopus 로고
    • "High-frequency network properties of MOS transistors including the substrate resistivity effects," 16, pp. 1049-1069, Dec. 1969.
    • M. B. Das, "High-frequency network properties of MOS transistors including the substrate resistivity effects," IEEE Trans. Electron Devices, vol. ED16, pp. 1049-1069, Dec. 1969.
    • IEEE Trans. Electron Devices, Vol. ED
    • Das, M.B.1
  • 7
    • 0024882544 scopus 로고    scopus 로고
    • "Modeling of the distributed gate RC effect in MOSFET's," vol. 8, pp. 1365-1367, Dec. 1989.
    • L-S. Kirn and R. W. Dutton, "Modeling of the distributed gate RC effect in MOSFET's," IEEE Trans. Computer Aided Design, vol. 8, pp. 1365-1367, Dec. 1989.
    • IEEE Trans. Computer Aided Design
    • Kirn, L.-S.1    Dutton, R.W.2
  • 8
    • 0028547702 scopus 로고    scopus 로고
    • "Impact of distributed gate resistance on the performance of MOS devices," vol. 41, pp. 750-754, Nov. 1994.
    • B. Razaui, R.-H. Yan, and K. F. Lee, "Impact of distributed gate resistance on the performance of MOS devices," IEEE Trans. Circuits Syst. I, vol. 41, pp. 750-754, Nov. 1994.
    • IEEE Trans. Circuits Syst. i
    • Razaui, B.1    Yan, R.-H.2    Lee, K.F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.