-
1
-
-
0029290137
-
-
"Low-power radio-frequency IC's for portable communications," vol. 83, pp. 544-569, Apr. 1995.
-
A. A. Abidi, "Low-power radio-frequency IC's for portable communications," Proc. IEEE, vol. 83, pp. 544-569, Apr. 1995.
-
Proc. IEEE
-
-
Abidi, A.A.1
-
2
-
-
0028386555
-
-
"MOSFET modeling for analog circuit CAD: Problems and prospects," vol. 29, pp. 210-216, 1994.
-
Y. P. Tsividis, "MOSFET modeling for analog circuit CAD: Problems and prospects," IEEEJ. Solid-State Circuits, vol. 29, pp. 210-216, 1994.
-
IEEEJ. Solid-State Circuits
-
-
Tsividis, Y.P.1
-
3
-
-
0021501926
-
-
"Noise associated with distributed resistance of MOSFET gate structure in integrated circuits," vol. ED-31, pp. 1505-1509, Oct. 1984.
-
R. P. Jindal, "Noise associated with distributed resistance of MOSFET gate structure in integrated circuits," IEEE Trans. Electron Devices, vol. ED-31, pp. 1505-1509, Oct. 1984.
-
IEEE Trans. Electron Devices
-
-
Jindal, R.P.1
-
4
-
-
0026928767
-
-
"A nonquasi-static MOSFET model for SPICE-AC analysis," vol. 11, pp. 1247-1257, Oct. 1992.
-
H. J. Park, P. K. Ko, and C. Hu, "A nonquasi-static MOSFET model for SPICE-AC analysis," IEEE Trans. Computer-Aided Design, vol. 11, pp. 1247-1257, Oct. 1992.
-
IEEE Trans. Computer-Aided Design
-
-
Park, H.J.1
Ko, P.K.2
Hu, C.3
-
5
-
-
0022152815
-
-
"A small signal dc-to-high-frequency nonquasistatic model for four-terminal MOSFET valid in all regions of operation," 32, pp. 2383-2391, Nov. 1985.
-
M. Bagheri and Y. Tsividis, "A small signal dc-to-high-frequency nonquasistatic model for four-terminal MOSFET valid in all regions of operation," IEEE Trans. Electron Devices, vol. ED32, pp. 2383-2391, Nov. 1985.
-
IEEE Trans. Electron Devices, Vol. ED
-
-
Bagheri, M.1
Tsividis, Y.2
-
6
-
-
0014628480
-
-
"High-frequency network properties of MOS transistors including the substrate resistivity effects," 16, pp. 1049-1069, Dec. 1969.
-
M. B. Das, "High-frequency network properties of MOS transistors including the substrate resistivity effects," IEEE Trans. Electron Devices, vol. ED16, pp. 1049-1069, Dec. 1969.
-
IEEE Trans. Electron Devices, Vol. ED
-
-
Das, M.B.1
-
7
-
-
0024882544
-
-
"Modeling of the distributed gate RC effect in MOSFET's," vol. 8, pp. 1365-1367, Dec. 1989.
-
L-S. Kirn and R. W. Dutton, "Modeling of the distributed gate RC effect in MOSFET's," IEEE Trans. Computer Aided Design, vol. 8, pp. 1365-1367, Dec. 1989.
-
IEEE Trans. Computer Aided Design
-
-
Kirn, L.-S.1
Dutton, R.W.2
-
8
-
-
0028547702
-
-
"Impact of distributed gate resistance on the performance of MOS devices," vol. 41, pp. 750-754, Nov. 1994.
-
B. Razaui, R.-H. Yan, and K. F. Lee, "Impact of distributed gate resistance on the performance of MOS devices," IEEE Trans. Circuits Syst. I, vol. 41, pp. 750-754, Nov. 1994.
-
IEEE Trans. Circuits Syst. i
-
-
Razaui, B.1
Yan, R.-H.2
Lee, K.F.3
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