A physical thermal noise model for SOI MOSFET

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 768-773

  Jin, Wei ^a   Chan, Philip C H ^a   Lau, Jack ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Carrier temperature; Lattice temperature; Mosfet model; SOI MOSFET; Thermal noise

Indexed keywords

CARRIER TEMPERATURES; LATTICE TEMPERATURES; PHYSICAL-BASED THERMAL NOISE MODELS;

CARRIER MOBILITY; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THERMAL NOISE;

MOSFET DEVICES;

EID: 0033902171     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830992     Document Type: Article

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