Analytical thermal noise model of deep submicron MOSFET's

IEEE Electron Device Letters

Volumn 20, Issue 8, 1999, Pages 399-401

  Klein, Peter ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ERROR ANALYSIS; HOLE TRAPS; SEMICONDUCTOR DEVICE MODELS; THERMAL NOISE;

CIRCUIT SIMULATIONS; DEEP SUBMICRONS;

MOSFET DEVICES;

EID: 0032651477     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.778156     Document Type: Article

References (11)

1. A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801-1805, Nov. 1986.
2. L. M. Franca-Neto et al., "Low noise FET design for wireless communications," in IEDM Tech. Dig., 1997, pp. 305-308.
3. B. Lemaitre, "An improved analytical LDD-MOSFET model for digital and analog circuit simulation for all channel length down to deep-submicron," in IEDM Tech. Dig., 1991, pp. 485-488.
4. R. M. D. A. Velghe et al., "Compact MOS modeling for analog circuit simulation," in IEDM Tech. Dig., 1993.
5. Y. Cheng et al., BSIM3v3 Manual, Univ. of California, Berkeley, 1995/1996.
6. J. Brews, "Physics of the MOS transistor," in Silicon Integrated Circuits, D. Kahng, Ed. New York: Academic, 1981, ch. A.
7. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1988.
8. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
9. T. W. Sigmon et al., "Diffusivity of electrons and holes in silicon," Appl. Phys. Lett., vol. 15, pp. 320-322, 1969.
10. J. Frey, "Effects of intervalley scattering on noise in GaAs and InP field-effect transistors," IEEE Trans. Electron. Devices, vol. 23, pp. 1298-1303, 1976.
11. R. Müller, Rauschen. Berlin, Vienna, New York: Springer-Verlag, 1990