Physical origin of the excess thermal noise in short channel MOSFETs

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 101-103

  Goo, Jung Suk ^a   Choi, Chang Hoon ^a   Abramo, Antonio ^b   Ahn, Jae Gyung ^c   Yu, Zhiping ^a   Lee, Thomas H ^a   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b UNIVERSITY OF UDINE   (Italy)

^c INTEGRATED DEVICE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EQUIVALENT CIRCUITS; HOT CARRIERS; HYDRODYNAMICS; THERMAL NOISE;

CHANNEL RESISTANCE; DRAIN CURRENTS;

MOSFET DEVICES;

EID: 0035249596     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902845     Document Type: Article

References (16)

1. A. van der Ziel, Noise in Solid State Devices and Circuits. New York: Wiley, 1986, ch. 5.
2. R. P. Jindal, "Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors," IEEE Trans. Electron Devices, vol. ED-33, pp. 1395-1397, Sept. 1986.
3. S. Tedja, J. Van der Spiegel, and H. H. Williams, "Analytical and experimental studies of thermal noise in MOSFET's," IEEE Trans. Electron Devices, vol. 41, pp. 2069-2075, Nov. 1994.
4. A. J. Scholten et al., "Accurate thermal noise model for deep-submicron CMOS," in IEDM Tech. Dig., Dec. 1999, pp. 155-158.
5. G. Knoblinger, P. Klein, and M. Tiebout, "A new model for thermal channel noise of deep submicron MOSFET's and its application in RF-CMOS design," in Proc. Symp. VLSI Circuits, Honolulu, HI, Jun. 2000, pp. 150-153.
6. D. P. Triantis, A. N. Birbas, and D. Kondis, "Thermal noise modeling for short-channel MOSFET's," IEEE Trans. Electron Devices, vol. 43, pp. 1950-1955, Nov. 1996.
7. C. H. Chen and M. J. Deen, "High frequency noise of MOSFET's. I. Modeling," Solid-State Electron., vol. 42, pp. 2069-2081, Nov. 1998.
8. K. M. van Vliet, "Markov approach to density fluctuations due to transport and scattering. II. Applications," J. Math. Phys., vol. 12, pp. 1998-2012, Sept. 1971.
9. K. K. Thornber, "Some consequences of spatial correlation on noise calculations," Solid-State Electron., vol. 17, pp. 95-97, Jan. 1974.
10. F. Danneville et al., "Microscopic noise modeling and macroscopic noise models: How good a connection?," IEEE Trans. Electron Devices, vol. 41, pp. 779-786, May 1994.
11. J.-S. Goo et al., "RF noise simulation for submicron MOSFET's based on hydrodynamic model," in Proc. Symp. VLSI Technology, Kyoto, Japan, June 1999, pp. 153-154.
12. Avant! Corp., http://www.avanticorp.com/∼Avant!/∼SolutionsProducts/∼Products/ ∼Item/∼1,1172,39,00.html.
13. A. Cappy and W. Heinrich, "High-frequency FET noise performance: A new approach," IEEE Trans. Electron Devices, vol. 36, pp. 403-409, Feb. 1989.
14. J.-S. Goo et al., "An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs," IEEE Trans. Electron Devices, vol. 47, pp. 2410-2419, Dec. 2000.
15. W. Shockley, J. A. Copeland, and R. P. James, "The impedance field method of noise calculation in active semiconductor devices." Quantum Theory of Atoms, Molecules and the Solid-State, pp. 537-563, 1966.
16. C. Fiegna, F. Venturi, E. Sangiorgi, and B. Riccò, "Efficient nonlocal modeling of the electron energy distribution in sub-micron MOSFETS," in IEDM Tech. Dig., Dec. 1990, pp. 451-454.