An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2410-2419

  Goo, Jung Suk ^a   Choi, Chang Hoon ^a   Danneville, Francçois ^b   Morifuji, Eiji ^c   Momose, Hisayo Sasaki ^c   Yu, Zhiping ^a   Iwai, Hiroshi ^c,d   Lee, Thomas H ^a   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b UNIV LILLE   (France)

^c TOSHIBA CORPORATION   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Mosfets; Semiconductor device modeling; Semiconductor device noise; Simulation

Indexed keywords

EID: 21544484788     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887030     Document Type: Article

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