Thermal noise modeling for short-channel MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1950-1954

  Triantis, Dimitris P ^a   Birbas, Alexios N ^a   Kondis, D ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE MEASUREMENT; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR DEVICE MODELS; THERMAL NOISE;

BACK GATE EFFECTS; CHANNEL LENGTH MODULATION; SOFTWARE PACKAGE SPICE; VELOCITY SATURATION;

MOSFET DEVICES;

EID: 0030284970     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543032     Document Type: Article

References (10)

1. S. Tedja J. Van der Spiegel H. Williams Analytical and experimental studies of thermal noise in MOSFET's IEEE Trans. Electron Devices 41 11 Nov. 1994 16 7859 333824
2. K. Takeuchi M. Fukuma Effects of the velocity saturated region on MOSFET characteristics IEEE Trans. Electron Devices 41 9 Sept. 1994 16 7519 310116
3. K. Toh P. Ko R. G. Meyer An engineering model for short-channel MOS devices IEEE J. Solid-State Circuits 23 4 Aug. 1988 4 17 346
4. V. Bareikis J. Liberis I. Matulioniene A. Matulionis P. Sakalas Experiments on hot electron noise in semiconductor materials for high-speed devices IEEE Trans. Electron Devices 41 11 Nov. 1994 16 7859 333822
5. D. Gasquet P. Golinelli Noise temperature and hot-carrier thermal conductivity in semiconductors Second ELEN Workshop 1995 Ph.D. thesis, Universite de Montpellier II. France, Grenoble
6. B. Wang J. Hellums C. Sodini MOSFET thermal noise modeling for analog integrated circuits IEEE J. Solid-State Circuits 29 7 July 1994 4 7474 303722
7. R. P. Jindal Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors IEEE Trans. Electron Devices ED-33 9 Sept. 1986
8. A. Abidi High-frequency noise measurements on FET's with small dimensions IEEE Trans. Electron Devices ED-33 11 Nov. 1986
9. Y. El-Mansy A. Boothroyd A simple two-dimensional model for IGFET operation in the saturation region IEEE Trans. Electron Devices ED-24 3 Mar. 1977
10. A. van der Ziel Noise in Solid State Devices and Circuits. 69, 75 1986 Wiley New York