A 2.7-V 900-MHz CMOS LNA and mixer

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 12, 1996, Pages 1939-1944

  Karanicolas, Andrew N ^a,b,c,d,e,f  

^a IEEE

^b LUCENT TECHNOLOGIES   (United States)

^c Massachusetts Inst of Technology ^*

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^e Massachusetts Institute of Technology Cambridge

^f INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISSIPATION; MIXER CIRCUITS; OSCILLATORS (ELECTRONIC); RADIO FREQUENCY AMPLIFIERS; TRANSCONDUCTANCE;

CURRENT REUSE TECHNIQUE; DOUBLE SIDEBAND NOISE; LOW NOISE AMPLIFIERS (LNA);

CMOS INTEGRATED CIRCUITS;

EID: 0030382993     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.545816     Document Type: Article

References (4)

1. T. D. Stetzler et al., "A 2.7-4.5 V single chip GSM transceiver RF integrated circuit," IEEE J. Solid-State Circuits, vol. 30, pp. 1421-1429, Dec. 1995.
2. R. G. Meyer and W. D. Mack, "A 1-GHz BiCMOS RF front-end IC," IEEE J. Solid-State Circuits, vol. 29, pp. 350-355, Mar. 1994.
3. S. A. Maas, Microwave Mixers. Dedham, MA: Artech, 1986.
4. T. T. Ha, Solid-State Microwave Amplifier Design. Malabar, FL: Krieger, 1991.