Barium strontium titanate capacitors for embedded dram

Materials Research Society Symposium - Proceedings

Volumn 541, Issue , 1999, Pages 11-22

  Zurcher, Peter ^b   Tracy, C J ^b   Jones Jr , R E ^a   Alluri, P ^a   Chu, P Y ^a   Jiang, B ^a   Kim, M ^b   Melnick, B M ^a   Raymond, M V ^a   Roberts, D ^a   Remmel, T P ^b   Tsai, T L ^b   White, B E ^a   Zafar, S ^a   Gillespie, S J ^a  

^a MOTOROLA INC   (United States)

^b MD:EL740 ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC RELAXATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; ELECTRODES; INTERFACES (MATERIALS); PERMITTIVITY; THREE DIMENSIONAL;

BARIUM STRONTIUM TITANATE; CAPACITOR SCALING; THREE DIMENSIONAL CAPACITOR DESIGN;

BARIUM COMPOUNDS;

EID: 0032592460     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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