Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 695-698

  Chen, C H ^a   Fang, Y K ^a   Yang, C W ^a   Ting, S F ^a   Tsair, Y S ^a   Wang, M F ^b   Yao, L G ^b   Chen, S C ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Debye length; Flat band; Oxide thickness

Indexed keywords

CAPACITANCE MEASUREMENT; ELLIPSOMETRY; HIGH RESOLUTION ELECTRON MICROSCOPY; OXIDES; THICKNESS MEASUREMENT; VOLTAGE MEASUREMENT;

FLAT BANDS; OXIDE THICKNESS;

MOS DEVICES;

EID: 0036540411     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992882     Document Type: Article

References (8)

1. Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
2. 1.5 nm direct-tunneling gate oxide Si MOSFET's
3. Quantum-mechanical modeling of accumulation layers in MOS structure
4. Quantum effect in oxide thickness determination from capacitance measurement
5. Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects
6. Oxide-thickness determination in thin-insulator MOS structures
7. On the oxide thickness extraction in deep-submicron technologies