Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

Solid-State Electronics

Volumn 47, Issue 6, 2003, Pages 1015-1020

  Luo, B ^a   Ren, F ^a   Allums, K K ^a   Gila, B P ^a   Onstine, A H ^a   Abernathy, C R ^a   Pearton, S J ^a   Dwivedi, R ^b   Fogarty, T N ^b   Wilkins, R ^b   Fitch, R C ^c   Gillespie, J K ^c   Jenkins, T J ^c   Dettmer, R ^c   Sewell, J ^c   Via, G D ^c   Crespo, A ^c   Baca, A G ^d   Shul, R J ^d  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b PRAIRIE VIEW A AND M UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; PASSIVATION; PROTON IRRADIATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

REVERSE BIAS CURRENTS;

TRANSISTORS;

EID: 0037408985     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00468-9     Document Type: Article

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