Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 2, 2001, Pages

  Neuberger, R ^a   Muller G ^a   Ambacher, O ^b   Stutzmann, M ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT POLARIZATION; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; CHANNEL CURRENTS; ELECTRON GASES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17344384455     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200102)183:23.0.CO;2-I     Document Type: Article

References (3)

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2. M.J. MURPHY, K. CHU, H. WU, W. YEO, W.J. SCHAFF, O. AMBACHER, L.F. EASTMAN, T.J. EUSTIS, J. SILCOX, R. DIMITROV, and M. STUTZMANN, Appl. Phys. Lett. 75, 3653 (1999).
3. B.K. RIDLEY, O. AMBACHER, and L.F. EASTMAN, Semicond. Sci. Technol. 15, 270 (2000).