High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 437-441

  Luo, B ^a   Johnson, J W ^a   Ren, F ^a   Allums, K K ^a   Abernathy, C R ^a   Pearton, S J ^a   Dwivedi, R ^a   Fogarty, T N ^b   Wilkins, R ^b   Dabiran, A M ^c   Wowchack, A M ^c   Polley, C J ^c   Chow, P P ^c   Baca, A G ^d  

^a University of Florida   (United States)

^b PRAIRIE VIEW A AND M UNIVERSITY   (United States)

^c SVT ASSOCIATES   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

AlGaN GaN; High mobility transistor; Proton irradiation effects

Indexed keywords

ANNEALING; ELECTRON TRAPS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; PROTON IRRADIATION; PROTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE CURRENTS;

GALLIUM NITRIDE;

EID: 0036575143     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0097-4     Document Type: Article

References (13)