The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETs

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 279-282

  Ansell, B J ^a   Harrison, I ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000588930     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<279::AID-PSSA279>3.0.CO;2-Y     Document Type: Article

References (5)

1. M.A. KHAN, J.N. KUZNIA, A.R. BHATTARAI, and D.T. OLSON, Appl. Phys. Lett. 62, 1786 (1993).
2. B.R. GREEN, K.K. CHU, E.M. CHUMBES, J.A. SMART, J.R. SHEALY, and L.F. EASTMAN, IEEE Trans. Electron Devices Lett. 21, 268 (2000).
3. S.C. BINARI, K. IKOSSI, J.A. ROUSSOS, W. KRUPPA, D. PARK, H.B. DIETRICH, D.D. KOLESKE, A.E. WICKENDEN, and R.L. HENRY, IEEE Trans. Electron Devices 48, 465 (2001).
4. W.R. FRENSLEY, IEEE Trans. Electron Devices 28, 962 (1981).
5. E.J. MILLER, X.Z. DANG, and E.T. YU, J. Appl. Phys. 88, 5951 (2000).