SCOPUS 정보 검색 플랫폼

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue , 2000, Pages

Current limitation after pinch-off in AlGaN/GaN FETs

(10) Dietrich, R a Wieszt, A a Vescan, A a Leier, H a Redwing, Joan M b Boutros, Karim S b Kornitzer, K c Freitag, R c Ebner, T c Thonke, K c

a DaimlerChrylser AG (Germany)

b ATMI (United States)

c UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CARRIER MOBILITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; PINCH EFFECT; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; ULTRAVIOLET RADIATION;

CONDUCTION BANDS; DRAIN CURRENTS; RELAXATION TIME; THERMODYNAMIC EQUILIBRIUM;

FIELD EFFECT TRANSISTORS;

EID: 3242808950 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300000028 Document Type: Article

Times cited : (7)

References (8)

1
- 0342750320
- AlGaN/GaN 'HEMT's for high power microwave amplifiers
- 4/13-17, CA, USA
- K. Chu, B. Green, L.F. Eastman, "AlGaN/GaN 'HEMT's for High Power Microwave Amplifiers", MRS Meeting (4/13-17, 1998), CA, USA
- (1998) MRS Meeting
- Chu, K.¹ Green, B.² Eastman, L.F.³

2
- 0032668826
- S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kenias, T. J. Jenkins, IEEE Electron Dev. Lett. 20, 161 (1999).
- (1999) IEEE Electron Dev. Lett. , vol.20 , pp. 161
- Sheppard, S.T.¹ Doverspike, K.² Pribble, W.L.³ Allen, S.T.⁴ Palmour, J.W.⁵ Kenias, L.T.⁶ Jenkins, T.J.⁷

3
- 0001590229
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸ Dimitrov, R.⁹ Wittmer, L.¹⁰ Stutzmann, M.¹¹ Rieger, W.¹² Hilsenbeck, J.¹³

4
- 0004071496
- John Wiley Sons, New York
- D.K. Schroder, "Semiconductor material and device characterization", John Wiley Sons, New York (1990)
- (1990) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

5
- 0000052441
- A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M. Shin, M. Skowronski, D.W. Greve, J. Appl. Phys. 84, 870-876 (1998).
- (1998) J. Appl. Phys. , vol.84 , pp. 870-876
- Polyakov, A.Y.¹ Smirnov, N.B.² Govorkov, A.V.³ Shin, M.⁴ Skowronski, M.⁵ Greve, D.W.⁶

6
- 0001246772
- M. T. Hirsch, J. A. Wolk, W. Walukiewicz, E. E. Haller, Appl. Phys. Lett. 71, 1098 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1098
- Hirsch, M.T.¹ Wolk, J.A.² Walukiewicz, W.³ Haller, E.E.⁴

7
- 0010309234
- H. M. Chen, Y. F. Chen, M. C. Lee, M. S. Feng, J. Appl. Phys. 82, 899 (1997).
- (1997) J. Appl. Phys. , vol.82 , pp. 899
- Chen, H.M.¹ Chen, Y.F.² Lee, M.C.³ Feng, M.S.⁴

8
- 0031124281
- C. H. Qiu, J. Y. Pankove, Appl. Phys. Lett. 70, 1983 (1997).
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1983
- Qiu, C.H.¹ Pankove, J.Y.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.