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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 16, 2002, Pages 1653231-16532311

Si-rich 6H- and 4H-SiC(0001) 3 × 3 surface oxidation and initial SiO2/SiC interface formation from 25 to 650 °C

(4) Amy, F a Soukiassian, P a Hwu, Y K a Brylinski, C a

a DIF (France)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE; SILICON DERIVATIVE; SILICON DIOXIDE;

ARTICLE; OXIDATION; RADIATION; ROOM TEMPERATURE; SPECTROSCOPY; TEMPERATURE DEPENDENCE;

EID: 0037091408 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (83)

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