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Volumn 65, Issue 16, 2002, Pages 1653231-16532311

Si-rich 6H- and 4H-SiC(0001) 3 × 3 surface oxidation and initial SiO2/SiC interface formation from 25 to 650 °C

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE; SILICON DERIVATIVE; SILICON DIOXIDE;

EID: 0037091408     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (82)

References (63)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.