-
1
-
-
4243982633
-
-
(Eds.), Akademie Verlag, Berlin, 1998 and references therein
-
W.J. Choyke, H.M. Matsunami, G. Pensl (Eds.), Silicon Carbide, A Review of Fundamental Questions and Applications to Current Device Technology, vol. I-II, Akademie Verlag, Berlin, 1998 and references therein.
-
Silicon Carbide, a Review of Fundamental Questions and Applications to Current Device Technology
, vol.1-2
-
-
Choyke, W.J.1
Matsunami, H.M.2
Pensl, G.3
-
5
-
-
21544461610
-
-
Morkoç H., Strite S., Gao G.B., Lin M.E., Sverdlov B., Burns M. J. Appl. Phys. 76:1994;1363.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 1363
-
-
Morkoç, H.1
Strite, S.2
Gao, G.B.3
Lin, M.E.4
Sverdlov, B.5
Burns, M.6
-
7
-
-
0003597031
-
-
Properties of Silicon Carbide, (Ed.), INSPEC, London
-
Properties of Silicon Carbide, G. Harris (Ed.), EMIS Datareview series, INSPEC, London, (1995) Vol. 13.
-
(1995)
EMIS Datareview Series
, vol.13
-
-
Harris, G.1
-
9
-
-
0038851057
-
-
Dortrecht: Kluwer Academic press
-
Lebedev A.A., Chelnokov V.E. E. Grafunkel, E. Gusev and A. Vul' Editors, 'Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices NATO Science Series 3, High Technology. 1998;431 Kluwer Academic press, Dortrecht.
-
(1998)
E. Grafunkel, E. Gusev and A. Vul' Editors, 'Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices NATO Science Series 3, High Technology
, pp. 431
-
-
Lebedev, A.A.1
Chelnokov, V.E.2
-
10
-
-
0021464564
-
-
and references therein
-
F. Bozso, L. Muehlhoff, M. Trenary, W.J. Choyke, J.T. Yates, Jr., J. Vac. Sci. Technol. A 2(1984) 1271; and references therein.
-
(1984)
J. Vac. Sci. Technol. a
, vol.2
, pp. 1271
-
-
Bozso, F.1
Muehlhoff, L.2
Trenary, M.3
Choyke, W.J.4
Yates J.T., Jr.5
-
11
-
-
0000544172
-
-
and references therein
-
J. Bouix, M.P. Berthet, F. Bosselet, R. Favre, M. Peronnet, J.C. Viala, C. Vincent, H. Vincent, in: Surface and Interfaces of Advances Materials, J. de Physique IV, 7 C6 (1997) 191 and references therein.
-
(1997)
In: Surface and Interfaces of Advances Materials, J. de Physique IV
, vol.7 C6
, pp. 191
-
-
Bouix, J.1
Berthet, M.P.2
Bosselet, F.3
Favre, R.4
Peronnet, M.5
Viala, J.C.6
Vincent, C.7
Vincent, H.8
-
12
-
-
0001912469
-
-
Bokros J.C., Akins R.J., Shim H.S., Hanbold A.D., Agarwal N.K. Chem. Technol. 7:1977;40.
-
(1977)
Chem. Technol.
, vol.7
, pp. 40
-
-
Bokros, J.C.1
Akins, R.J.2
Shim, H.S.3
Hanbold, A.D.4
Agarwal, N.K.5
-
16
-
-
0005934066
-
-
in: G. Harris (Ed.), EMIS Datareview series, INSPEC, London
-
S. Nishino, in: G. Harris (Ed.), Properties of Silicon Carbide, vol. 13, EMIS Datareview series, INSPEC, London, 1995 p. 204.
-
(1995)
Properties of Silicon Carbide
, vol.13
, pp. 204
-
-
Nishino, S.1
-
20
-
-
0000920530
-
-
in: G. Harris (Ed.), EMIS Datareview series, INSPEC, London, and references therein
-
R. Kaplan, V.M. Bermudez, in: G. Harris (Ed.), Properties of Silicon Carbide, vol. 13, EMIS Datareview series, INSPEC, London, 1995, p. 101 and references therein.
-
(1995)
Properties of Silicon Carbide
, vol.13
, pp. 101
-
-
Kaplan, R.1
Bermudez, V.M.2
-
21
-
-
0031533326
-
-
and references therein
-
V.M. Bermudez, Phys. Stat. Sol. b 202 (1997) 447 and references therein.
-
(1997)
Phys. Stat. Sol. B
, vol.202
, pp. 447
-
-
Bermudez, V.M.1
-
23
-
-
84911623229
-
-
(PhD), Université de Paris-Sud/Orsay, 19 December
-
F. Semond, Thèse de Doctorat (PhD), Université de Paris-Sud/Orsay, 19 December, 1996.
-
(1996)
Thèse de Doctorat
-
-
Semond, F.1
-
27
-
-
0001327204
-
-
Semond F., Soukiassian P., Mayne A., Dujardin G., Douillard L., Jaussaud C. Phys Rev. Lett. 77:1996;2013.
-
(1996)
Phys Rev. Lett.
, vol.77
, pp. 2013
-
-
Semond, F.1
Soukiassian, P.2
Mayne, A.3
Dujardin, G.4
Douillard, L.5
Jaussaud, C.6
-
28
-
-
3743135131
-
-
Soukiassian P., Semond F., Douillard L., Mayne A., Dujardin G., Pizzagalli L., Joachim C. Phys. Rev. Lett. 78:1997;907.
-
(1997)
Phys. Rev. Lett.
, vol.78
, pp. 907
-
-
Soukiassian, P.1
Semond, F.2
Douillard, L.3
Mayne, A.4
Dujardin, G.5
Pizzagalli, L.6
Joachim, C.7
-
31
-
-
0031336847
-
-
Reuter K., Bernhardt J., Wedler H., Schardt J., Starke U., Heinz K. Phys. Rev. Lett. 79:1997;4818.
-
(1997)
Phys. Rev. Lett.
, vol.79
, pp. 4818
-
-
Reuter, K.1
Bernhardt, J.2
Wedler, H.3
Schardt, J.4
Starke, U.5
Heinz, K.6
-
34
-
-
0040629167
-
-
Semond F., Douillard L., Soukiassian P., Mayne A., Dujardin G., di Cioccio L., Jaussaud C. Surf. Rev. Lett. 5:1998;207.
-
(1998)
Surf. Rev. Lett.
, vol.5
, pp. 207
-
-
Semond, F.1
Douillard, L.2
Soukiassian, P.3
Mayne, A.4
Dujardin, G.5
Di Cioccio, L.6
Jaussaud, C.7
-
35
-
-
0037606559
-
-
P. Badziag, Surf. Sci. 236 (1990) 48; Phys. Rev. B 44 (1991) 11143.
-
(1990)
Surf. Sci.
, vol.236
, pp. 48
-
-
Badziag, P.1
-
36
-
-
0000157751
-
-
P. Badziag, Surf. Sci. 236 (1990) 48; Phys. Rev. B 44 (1991) 11143.
-
(1991)
Phys. Rev. B
, vol.44
, pp. 11143
-
-
-
40
-
-
0000874889
-
-
Sabisch M., Krüger P., Mazur A., Rohlfing M., Pollmann J. Phys. Rev. B. 53:1996;13121.
-
(1996)
Phys. Rev. B
, vol.53
, pp. 13121
-
-
Sabisch, M.1
Krüger, P.2
Mazur, A.3
Rohlfing, M.4
Pollmann, J.5
-
43
-
-
0031649873
-
-
in: H. Morkoç, G. Pensl, B. Monemar, E. Janzén (Eds.), Switzerland, Trans Tech Publications, Materials Science Forum, 264-268
-
L. Douillard, F. Semond, V.Yu Aristov, P. Soukiassian, B. Delley, A. Mayne, G. Dujardin, E. Wimmer, in: H. Morkoç, G. Pensl, B. Monemar, E. Janzén (Eds.), Silicon Carbide and III-V Nitrides and Related Materials',Switzerland, Trans Tech Publications, Materials Science Forum, 264-268, 1998 p. 379.
-
(1998)
Silicon Carbide and III-V Nitrides and Related Materials'
, pp. 379
-
-
Douillard, L.1
Semond, F.2
Aristov, V.Yu.3
Soukiassian, P.4
Delley, B.5
Mayne, A.6
Dujardin, G.7
Wimmer, E.8
-
45
-
-
0000146350
-
-
and references therein
-
C.B. Duke, Chem. Rev. 96 (1996) 1237 and references therein.
-
(1996)
Chem. Rev.
, vol.96
, pp. 1237
-
-
Duke, C.B.1
-
51
-
-
0001698498
-
-
Powers J.M., Wander A., Rous P.J., Van Hove M.A., Somorjai G.A. Phys. Rev. B. 44:1991;11159.
-
(1991)
Phys. Rev. B
, vol.44
, pp. 11159
-
-
Powers, J.M.1
Wander, A.2
Rous, P.J.3
Van Hove, M.A.4
Somorjai, G.A.5
-
55
-
-
0001425171
-
-
Hara S., Slijkerman W.F.J., van der Veen J.F., Ohdomari I., Misawa S., Sakuma E., Yoshida S. Surf. Sci. Lett. 231:1990;L 196.
-
(1990)
Surf. Sci. Lett.
, vol.231
, pp. 196
-
-
Hara, S.1
Slijkerman, W.F.J.2
Van Der Veen, J.F.3
Ohdomari, I.4
Misawa, S.5
Sakuma, E.6
Yoshida, S.7
-
56
-
-
0000630847
-
-
Yoshinobu T., Izumikawa I., Mitsui H., Fuyuki T., Matsunami H. Appl. Phys. Lett. 59:1991;2844.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2844
-
-
Yoshinobu, T.1
Izumikawa, I.2
Mitsui, H.3
Fuyuki, T.4
Matsunami, H.5
-
58
-
-
0039443805
-
-
preprint tentatively scheduled to appear September 14.
-
W. Lu, P. Krüger, J. Pollmann, preprint tentatively scheduled to appear in Phys. Rev. Lett. 81, (1998) September 14.
-
(1998)
In Phys. Rev. Lett.
, vol.81
-
-
Lu, W.1
Krüger, P.2
Pollmann, J.3
-
60
-
-
0000130245
-
-
Semond F., Douillard L., Soukiassian P., Dunham D., Amy F., Rivillon S. Appl. Phys. Lett. 68:1996;2144.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2144
-
-
Semond, F.1
Douillard, L.2
Soukiassian, P.3
Dunham, D.4
Amy, F.5
Rivillon, S.6
-
61
-
-
0039443806
-
-
V.Yu. Aristov, L. Douillard, O. Fauchoux, F. Semond, P. Soukiassian, Omicron Newsletters IV (1997) 4.
-
(1997)
Omicron Newsletters
, vol.4
, pp. 4
-
-
Aristov, V.Yu.1
Douillard, L.2
Fauchoux, O.3
Semond, F.4
Soukiassian, P.5
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