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Volumn 61-62, Issue , 1999, Pages 506-515

Atomic control of Si-terminated cubic silicon carbide (100) surfaces: Morphology and self-organized atomic lines

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON TRANSITIONS; MORPHOLOGY; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SURFACE STRUCTURE; SURFACE TREATMENT; THERMAL EFFECTS;

EID: 0000192005     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00463-2     Document Type: Article
Times cited : (27)

References (61)
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    • (1995) Properties of Silicon Carbide , vol.13 , pp. 101
    • Kaplan, R.1    Bermudez, V.M.2
  • 21
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    • and references therein
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    • Bermudez, V.M.1
  • 23
    • 84911623229 scopus 로고    scopus 로고
    • (PhD), Université de Paris-Sud/Orsay, 19 December
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    • (1996) Thèse de Doctorat
    • Semond, F.1
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    • (1991) Phys. Rev. B , vol.44 , pp. 11143
  • 45
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    • and references therein
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    • (1996) Chem. Rev. , vol.96 , pp. 1237
    • Duke, C.B.1
  • 58
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    • preprint tentatively scheduled to appear September 14.
    • W. Lu, P. Krüger, J. Pollmann, preprint tentatively scheduled to appear in Phys. Rev. Lett. 81, (1998) September 14.
    • (1998) In Phys. Rev. Lett. , vol.81
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.