Microwave characteristics of BARITT diodes based on silicon carbide

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 343-348

  Aroutiounian, V M ^a   Buniatian, V V ^a   Soukiassian, P ^b,c  

^a YEREVAN STATE UNIVERSITY   (Armenia)

^b CEA SACLAY   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC IMPEDANCE; MICROWAVES; NEGATIVE RESISTANCE; SILICON CARBIDE;

BAND GAP; TRAP LEVELS;

SEMICONDUCTOR DIODES;

EID: 0033080013     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00279-2     Document Type: Article

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