Comparison of thermally oxidized metal-oxide-semiconductor interfaces on 4H and 6H polytypes of silicon carbide

Applied Physics Letters

Volumn 68, Issue 6, 1996, Pages 803-805

  Shenoy, Jayarama N ^a   Cooper Jr , James A ^a   Melloch, Michael R ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 6744249859     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116538     Document Type: Article

References (12)

1. J. N. Shenoy, G. L. Chindalore, M. R. Melloch,. J. A. Cooper, Jr., J. W. Palmour, and K. G. Irvine, J. Electron. Mater. 24, 303 (1995).
2. N. Singh and A. Rys, J. Appl. Phys. 73, 1729 (1993).
3. P. Neudeck, S. Kang, J. Pettit, and M. Tabib-Azar, J. Appl. Phys. 75, 7949 (1994).
4. R. E. Avila, J. J. Kopanski, and C. D. Fung, Appl. Phys. Lett. 49, 334 (1986).
5. S. M. Tang, W. B. Berry, R. Kwor, M. V. Zeller, and L. G. Matus, J. Electrochem. Soc. 137, 221 (1990).
6. W. J. Schaffer, G. H. Negley, K. G. Irvine, and J. W. Palmour, Mater. Res. Soc. Symp. Proc. 339, 595 (1994).
7. J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., International Conference on Silicon Carbide and Related Materials, Washington, DC, November 1-3, 1993 [Inst. Phys. Conf. Ser. 137, 499 (1993)].
8. J. W. Palmour, S. T. Allen, R. Singh, L. A. Lipkin, and D. G. Waltz, International Conference on Silicon Carbide and Related Materials, Kyoto, Japan, September 18-21, 1995.
9. R. Castagne and A. Vapaille, Surf. Sci. 28, 557 (1971).
10. J. A. Powell, J. B. Petit, J. H. Edgar, I. G. Jenkins, L. G. Matus, W. J. Choyke, L. Clemen, M. Yotanathan, J. W. Wang, and P. Pirouz, Appl. Phys. Lett. 59, 183 (1991).
11. J. N. Shenoy, L. A. Lipkin, G. L. Chindalore, J. Pan, J. A. Cooper, Jr., and M. R. Melloch, International Symposium on Comp. Semiconductors, San Diego, CA, September 18-22, 1994 [Inst. Conf. Ser. 141, 449 (1994)].
12. S. T. Sheppard, J. A. Cooper, Jr., and M. R. Melloch, J. Appl. Phys. 75, 3205 (1994).