SiC(0001)3 × 3-Si surface reconstruction - A new insight with a STM

Surface Science

Volumn 346, Issue 1-3, 1996, Pages 49-54

  Kulakov, M A ^a,b   Henn, G ^a   Bullemer, B ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

Adatoms; Scanning tunnelling microscopy; Silicon carbide; Single crystal surfaces; Surface structure

Indexed keywords

AGGLOMERATION; ANNEALING; ATOMS; BONDING; CRYSTAL ATOMIC STRUCTURE; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; TEMPERATURE;

EPITAXIALLY AGGREGATES; POLYTYPISM; SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION;

SURFACE STRUCTURE;

EID: 0030085257     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00919-1     Document Type: Article

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