Identification of the 6H-SiC(0001) 3×3 surface reconstruction core-level shifted components

Surface Science

Volumn 464, Issue 1, 2000, Pages

  Amy, F ^a,b   Soukiassian, P ^a,b   Hwu, Y K ^c   Brylinski, C ^d  

^a DIF   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c ACADEMIA SINICA   (Taiwan)

^d THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; HYDROGEN; PHOTOEMISSION; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE; SYNCHROTRON RADIATION;

ADATOMS; ADLAYERS; SURFACE RECONSTRUCTION; TRIMERS;

SILICON CARBIDE;

EID: 0034276064     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00637-3     Document Type: Article

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