Direct SiO2/β-SiC(100)3×2 interface formation from 25°C to 500°C

Applied Physics Letters

Volumn 68, Issue 15, 1996, Pages 2144-2146

  Semond, F ^a,b   Douillard, L ^a,b   Soukiassian, P ^a,b   Dunham, D ^c   Amy, F ^c   Rivillon, S ^c  

^a CEA SACLAY   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c NORTHERN ILLINOIS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000130245     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115612     Document Type: Article

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