X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN

Journal of Applied Physics

Volumn 92, Issue 11, 2002, Pages 6671-6678

  Rickert, K A ^a   Ellis, A B ^a   Kim, Jong Kyu ^b   Lee, Jong Lam ^b   Himpsel, F J ^c   Dwikusuma, F ^c   Kuech, T F ^c  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL CONTACTS;

FERMI LEVEL;

EID: 0036905527     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1518129     Document Type: Article

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