Reduction of Ohmic contact resistivity on p-type GaN by surface treatment

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 763-766

  Lee, J L ^a   Kim, J K ^a   Lee, J W ^b   Park, Y J ^b   Kim, T ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FERMI LEVEL; NITRIDES; OHMIC CONTACTS; OXIDES; PLATINUM; REDUCTION; SURFACE CLEANING; SURFACE TREATMENT;

GALLIUM NITRIDE; OHMIC CONTACT RESISTIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221652     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<763::AID-PSSA763>3.0.CO;2-6     Document Type: Article

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