Correlation of microstructure with electrical behavior of Ti/GaN Schottky contacts

Journal of Electronic Materials

Volumn 27, Issue 11, 1998, Pages 1236-1239

  Hirsch, M T ^a,b   Duxstad, K J ^a   Haller, E E ^a   Ruvimov, S ^a   Liliental Weber, Z ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

GaN; Metal contacts; Schottky barrier height; Structural characterization

Indexed keywords

ANNEALING; CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; MICROSTRUCTURE; SCHOTTKY BARRIER DIODES; SURFACE ROUGHNESS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

SCHOTTKY-MOTT THEORY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032208107     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0075-6     Document Type: Article

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