Experimental study of sputter deposited contacts to gallium nitride

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 1089-1094

  Piquette, E C ^a   Bandic, Z Z ^a   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; MAGNETRON SPUTTERING; METALLIC FILMS; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; THERMAL EFFECTS;

METALLIC CONTACTS; SCHOTTKY BARRIERS;

ELECTRIC CONTACTS;

EID: 0031377068     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-1089     Document Type: Conference Paper

References (10)