Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaN

Journal of the Electrochemical Society

Volumn 147, Issue 6, 2000, Pages 2297-2302

  Lee, Jong Lam ^a   Kim, Jong Kyu ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; HYDROCHLORIC ACID; PALLADIUM; PHOSPHORIC ACID; POTASSIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT RESISTIVITY; POTASSIUM HYDROXIDE; SEMICONDUCTING GALLIUM NITRIDE;

OHMIC CONTACTS;

EID: 0034206715     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393524     Document Type: Article

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