Pt Schottky contacts to n -GaN formed by electrodeposition and physical vapor deposition

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2593-2600

  Delucca, J M ^a   Mohney, S E ^a   Auret, F D ^b   Goodman, S A ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRODEPOSITION; ELECTRODES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PHYSICAL VAPOR DEPOSITION;

BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; DEPOSITION CONDITIONS; ELECTRICAL CHARACTERISTIC; ELECTRICALLY ACTIVE DEFECTS; I-V MEASUREMENTS; METAL DEPOSITION; SCHOTTKY CONTACTS;

PLATINUM;

EID: 0001079766     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1287605     Document Type: Article

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