Characterisation of Pd Schottky barrier on n-type GaN

Electronics Letters

Volumn 32, Issue 1, 1996, Pages 68-70

  Ping, A T ^a   Schmitz, A C ^a   Asif Khan, M ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; GOLD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PALLADIUM; SEMICONDUCTING GALLIUM COMPOUNDS;

BARRIER HEIGHT; CAPACITANCE VOLTAGE MEASUREMENTS; GALLIUM NITRIDE; IDEALITY FACTOR; NORDE PLOT; PALLADIUM SCHOTTKY BARRIER; RICHARDSON CONSTANT;

SCHOTTKY BARRIER DIODES;

EID: 0030568229     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960029     Document Type: Article

References (6)