Metal contacts to n-type GaN

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 255-260

  Schmitz, A C ^a   Ping, A T ^a   Asif Khan, M ^b,c   Chen, Q ^b   Yang, J W ^b,c   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b APA Optronics   (United States)

^c University of South Carolina ^*  (United States)

Author keywords

Barrier height; Gallium nitride (GaN); Schottky contacts

Indexed keywords

EID: 0000614360     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0396-5     Document Type: Article

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