Metal contacts to n-type GaN

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 255-260

  Schmitz, A C ^a   Ping, A T ^a   Asif Khan, M ^b,c   Chen, Q ^b   Yang, J W ^b,c   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b APA Optronics   (United States)

^c University of South Carolina   (United States)

Author keywords

Barrier height; Gallium nitride (GaN); Schottky contacts

Indexed keywords

EID: 0000614360     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0396-5     Document Type: Article

References (21)

1. P. Hacke, T. Detchprohm, K. Hiramatsu and N. Sawaki, Appl. Phys. Lett. 63, 2676 (1993).
2. S.C. Binari, H.B. Dietrich, G. Kelner, L.B. Rowland, K. Doverspike and D.K. Gaskill, Electron. Lett. 30, 909 (1994).
3. J.D. Guo, M.S. Feng, R.J. Guo, F.M. Pan and C.Y. Chang, Appl. Phys. Lett. 67, 2657 (1995).
4. A.T. Ping, A.C. Schmitz, M. Asif Khan and I. Adesida, Electron. Lett. 32, 68 (1996).
5. E.V. Kalinina, N.I. Kuznetsov, V.A. Dmitriev, K.G. Irvine and C.H. Carter, Jr., J. Electron. Mater. 25, 831 (1996).
6. L. Wang, M.I. Nathan, T-H. Lim, M.A. Khan and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996).
7. A.C. Schmitz, A.T. Ping, M. Asif Khan, Q. Chen, J.W. Yang and I. Adesida, Semicond. Sci. Technol. 11, 1464 (1996).
8. Z. Fan, S.N. Mohammad, W. Kim, Ö. Aktas, A.E. Botchkarev, K. Suzue and H. Morkoç, J. Electron. Mater. 25, 1703 (1996).
9. J.D. Guo, F.M. Pan, M.S. Feng, R.J. Guo, P.F. Chou and C.Y. Chang, J. Appl. Phys. 80, 1623 (1996).
10. A.C. Schmitz, A.T. Ping, M. Asif Khan, Q. Chen, J.W. Yang and I. Adesida, Electron. Lett. 32, 1832 (1996).
11. M.T. Hirsch, K.J. Duxstad and E.E. Haller, Electron. Lett. 33, 95 (1997).
12. Q.Z. Liu, L.S. Yu, S.S. Lau, J.M. Redwing, N.R. Perkins and T.F. Kuech, Appl. Phys. Lett. 70, 1275 (1997).
13. D.R. Lide, CRC Handbook of Chemistry and Physics (Boca Raton, FL: CRC, 1992), p. 12.
14. D.K. Schroder, Semiconductor material and device characterization (New York: John Wiley & Sons, 1990), p. 153.
15. A.M. Goodman, J. Appl. Phys. 34, 329 (1963).
16. A.S. Barker and M. Idegems, Phys. Rev. B 7, 743 (1973).
17. J.S. Foresi and T. D. Moustakas, Appl. Phys. Lett. 62, 2859 (1993).
18. S. Kurtin, T.C. McGill and C.A. Mead, Phys. Rev. Lett. 22, 1433 (1969).
19. S.C. Binari, K. Doverspike, G. Kelner, H.B. Dietrich and A.E. Wickenden, Solid State Electron. 41, 177 (1997).
20. A.M. Cowley and S.M. Sze, J. Appl. Phys. 36, 3212 (1965).
21. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (New York: Wiley, 1981), p. 245.