Schottky barriers on p-GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 837-841

  Kuznetsov, N I ^a   Kalinina, E V ^a   Soloviev, V A ^a   Dmitriev, V A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAMS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SUBSTRATES; VACUUM APPLICATIONS; VOLTAGE MEASUREMENT;

BACK SCATTERED ELECTRON MODES; CAPACITANCE VOLTAGE CHARACTERISTICS; ELECTRON BEAM INDUCE CURRENT; IONIZED ACCEPTORS; VACUUM THERMAL EVAPORATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726608     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)