Schottky barriers on n-GaN grown on SiC

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 831-834

  Kalinina, E V ^a   Kuznetsov, N I ^a   Dmitriev, V A ^b   Irvine, K G ^b   Carter Jr , C H ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Barrier height; Built in potential; Electron affinity; GaN; Ideality factor; Schottky barrier; SiC

Indexed keywords

EID: 0000141048     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666644     Document Type: Article

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