Influence of the exchange reaction on the electronic structure of GaN/Al junctions

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 12, 1998, Pages 7906-7912

  Picozzi, S ^a   Continenza, A ^a   Massidda, S ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000648172     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.7906     Document Type: Article

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