Effects of annealing on Ti Schottky barriers on n-type GaN

Electronics Letters

Volumn 33, Issue 1, 1997, Pages 95-96

  Hirsch, M T ^a   Duxstad, K J ^a   Haller, E E ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Annealing; Gallium nitride; Schottky barriers

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; EFFECTS; ELECTRIC CURRENT MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE MEASUREMENT; TITANIUM; VOLTAGE MEASUREMENT;

CURRENT VOLTAGE MEASUREMENTS; ELECTRON BEAM EVAPORATION; HALL EFFECT MEASUREMENTS; THERMIONIC EMISSION THEORY;

SCHOTTKY BARRIER DIODES;

EID: 0031546407     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970021     Document Type: Article

References (9)

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