Deuterium effect on interface states and SILC generation in CHE stress conditions: A comparative study

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 339-340

  Esseni, David ^a   Bude, Jeff D ^b   Selmi, Luca ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEUTERIUM; LEAKAGE CURRENTS; STRESS ANALYSIS;

CHANNEL HOT ELECTRONS (CHE); HOT HOLE INJECTION (HHI); STRESS INDUCED LEAKAGE CURRENTS (SILC);

QUANTUM THEORY;

EID: 0034452590     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904325     Document Type: Article

References (12)