Comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 405-409

  Zous, Nian Kai ^a   Wang, Tahui ^a   Yeh, Chih Chich ^a   Tsai, Ching Wei ^a   Huang, Chimoon ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES; TRANSIENTS;

POSITIVE CHARGE ASSISTED TUNNELING CURRENT; POSITIVE OXIDE CHARGE DETRAPPING; STRESS INDUCED LEAKAGE CURRENT; SUBSTRATE HOT ELECTRON INJECTION; TUNNEL OXIDES;

LEAKAGE CURRENTS;

EID: 0032646373     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (21)