Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 343-346

  Mitani, Y ^a   Satake, H ^a   Itoh, H ^a   Toriumi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRON TRAPS; HEAVY WATER; INTERFACES (MATERIALS); OXIDATION; POLYSILICON; SILANES; SILICA;

FOWLER-NORDHEIM ELECTRON INJECTION; PYROGENIC OXIDATION;

GATES (TRANSISTOR);

EID: 0034452571     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)