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Applied Physics Letters

Volumn 74, Issue 3, 1999, Pages 457-459

Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

(3) Register, Leonard F a Rosenbaum, Elyse b Yang, Kevin b,c

a University of Illinois at Urbana Champaign (United States)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PROBABILITY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAP DISPERSION RELATION; DIRECT TUNNELING CURRENT; ELECTRON IMPACT FREQUENCY; FOWLER-NORDHEIM TUNNELING; MEAN TUNNELING PROBABILITY; SHEET CHARGE DENSITY;

MOS DEVICES;

EID: 0033579745 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123060 Document Type: Article

Times cited : (240)

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