Extended data retention process technology for highly reliable flash EEPROMs of 106 to 107 W/E cycles

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 378-382

  Arai, Fumitaka ^a   Maruyama, Toru ^a   Shirota, Riichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; INTEGRATED CIRCUIT TESTING; SEMICONDUCTING SILICON;

EXTENDED DATA RETENTION PROCESS TECHNOLOGY;

PROM;

EID: 0031652543     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)