Model for the oxide thickness dependence of SILC generation based on anode hole injection process

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 791-795

  Jahan, C ^a   Bruyere S ^a,b   Ghibaudo, G ^b   Vincent, E ^a   Barla, K ^a  

^a ORANGE LABS   (France)

^b Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; DEFECTS; ELECTRON TUNNELING; HOLE TRAPS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXIDES; THICKNESS MEASUREMENT;

ANODE HOLE INJECTION PROCESS; ASYMMETRICAL DEFECT GENERATION; DIRECT TUNNELING REGIME; STRESS INDUCED LEAKAGE CURRENT;

SEMICONDUCTOR DEVICE MODELS;

EID: 0345072542     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00102-X     Document Type: Article

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