New data retention mechanism after endurance stress on flash memory

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 194-199

  Kameyama, Hideaki ^a   Okuyama, Yutaka ^a   Kamohara, Shiro ^a   Kubota, Katsuhiko ^a   Kume, Hitoshi ^a   Okuyama, Kousuke ^a   Manabe, Yukiko ^a   Nozoe, Atsushi ^a   Uchida, Hiroyuki ^a   Hidaka, Mitsumori ^a   Ogura, Katsutoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TRAPS; MATHEMATICAL MODELS; THERMIONIC EMISSION;

FLASH MEMORIES;

SEMICONDUCTOR STORAGE;

EID: 0033732342     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (17)