Experimental Evidence of Inelastic Tunneling and New I-V Model for Stress-induced Leakage Current

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 323-326

  Takagi, Shin Ichi ^a   Yasuda, Naoki ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SEPARATION; CARRIER TRANSPORT MODEL; ENERGY; ENERGY OF ELECTRON; EXPERIMENTAL EVIDENCE; EXPERIMENTAL TECHNIQUES; GATE OXIDE; INELASTIC TUNNELING; STRESS-INDUCED LEAKAGE CURRENT; V-MODEL;

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MATHEMATICAL MODELS;

CARRIER SEPARATION MEASUREMENT; ENERGY RELAXATION; GATE OXIDES;

LEAKAGE CURRENTS;

EID: 0030399672     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553594     Document Type: Conference Paper

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