A new quantitative model to predict SILC-relateddisturb characteristics in Flash E2PROM devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 343-346

  de Blauwe, J ^a   van Houdt, J ^a   Wellekens, D ^a   Degraeve, R ^a   Roussel, Ph ^a   Haspeslagh, L ^a   Deferm, L ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CELL OPTIMIZATION; ERASE CYCLING; MEASUREMENTS OF; OPTIMIZATION PROCEDURES; QUANTITATIVE MODELS; TUNNEL OXIDES;

CAPACITORS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OPTIMIZATION; OXIDES;

FOWLER-NORDHEIM TUNNELING; NONVOLATILE MEMORY; STRESS INDUCED LEAKAGE CURRENT; WRITE ERASE CYCLING;

PROM;

EID: 0030409312     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553599     Document Type: Conference Paper

References (6)

1. [I] J. Van Houdt, D. Wellekens, L. Faraone, L. Haspeslagh, L. Deferm, G. Groeseneken, and H. E. Maes, IEEE Transactions on Components, Packaging, and Manufacturing Technology, Vol. 17, pp. 380, 1994.
2. D. A. Baglee and M. C. Smayling, IEDM Tech. Dig., pp. 624, 1985.
3. R. Moazzami and C. Hu, IEDM Techn. Dig., pp. 139-142, 1992.
4. M. Kato et al. IEDM Tech. Dig., pp. 45-48, 1994.
5. J. De BIauwe et al., Proceedings of the 26 th ESSDERC, pp. 361, 1996.
6. P. Olivo, T. N. Nguyen, and B. Ricco, IEEE TED, vol. TED-35, pp. 2259-2267, 1988.